View TDA6500_885487.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1. general description TDA6500tt and tda6501tt are programmable 2-mixer, 3-oscillator and synthesizer moplls intended for pure 3-band tuner concepts. the device includes two double balanced mixers for the low and mid/high bands and three oscillators for the low, mid and high bands, respectively. other functions are an if ampli?er, a wide-band agc detector and a pll synthesizer. two pins are available between the mixer output and the if ampli?er input to enable if ?ltering for improved signal handling. the device can be controlled according to the i 2 c-bus format. 2. features n single-chip, 5 v mixer/oscillator and synthesizer for tv and vcr tuners n i 2 c-bus protocol compatible with 3.3 v and 5 v microcontrollers: u addres s + 6 data bytes transmission u addres s + 1 status byte (i 2 c-bus read mode) u four independent i 2 c-bus addresses n two pmos open-drain ports with 5 ma source capability to switch high band and fm sound trap (p2 and p3) n one pmos open-drain port p1 with 20 ma source capability to switch the mid band n one pmos open-drain port p0 with 10 ma source capability to switch the low band n five step, 3-bit analog-to-digital converter (adc) and npn open-collector general purpose port p6 with 5 ma sinking capability n npn open-collector general purpose port p4 with 5 ma sinking capability n internal agc ?ag n in-lock ?ag n 33 v tuning voltage output n 15-bit programmable divider n programmable reference divider ratio: 64, 80 or 128 n programmable charge pump current: 60 m a or 280 m a n varicap drive disable n balanced mixer with a common emitter input for the low band (single input) n balanced mixer with a common base input for the mid and high bands (balanced input) n 2-pin asymmetrical oscillator for the low band n 2-pin asymmetrical oscillator for the mid band n 4-pin symmetrical oscillator for the high band TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards rev. 02 14 june 2005 product data sheet
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 2 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards n if preampli?er with asymmetrical 75 w output impedance to drive a saw ?lter (500 w /40 pf) n wide-band agc detector for internal tuner agc: u five programmable take-over points u two programmable time constants 3. applications n tv and vcr tuners n specially suited for switched concepts, all systems n specially suited for strong off-air reception 4. ordering information table 1: ordering information type number package name description version TDA6500tt tssop32 plastic thin shrink small outline package; 32 leads; body width 6.1 mm; lead pitch 0.65 mm sot487-1 tda6501tt
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 3 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 5. block diagram fig 1. block diagram mce149 reference divider 64, 80, 128 crystal oscillator TDA6500tt (tda6501tt) 15-bit programmable divider 15-bit frequency register phase comparator lock detector charge pump opamp cp fl p0 . p1 cp 1 t2 t1 t0 rsa rsb os control register al2 atc al1 al0 0 0 0 0 auxiliary register p6 00 p4 p3 p2 p1 p0 band switch register status register i 2 c-bus transceiver 3-bit adc power on reset agc fl por f ref f div v ref os f ref f div gate mixer mid + high high oscillator agc detector stabilizer mixer low rf input low rf input mid + high t0, t1, t2 t0, t1, t2 rsa rsb xtal scl sda hoscin1 hoscout2 hoscout1 hoscin2 cp vt p6/adc 14 (19) 13 (20) 17 (16) 22 (11) 26 (7) 24 (9) 23 (10) pllgnd 20 (13) as 21 (12) 19 (14) 18 (15) (18) 15 (17) 16 (24) 9 (25) 8 (26) 7 (27) 6 p1 + p0 . p1 p1 p0 p0 agc al0, al1, al2 atc v stab mid oscillator low oscillator loscout loscin oscgnd (32) 1 (31) 2 moscout moscin (28) 5 (29) 4 mhbin1 mhbin2 32 (1) 31 (2) lbin v cc v cc rfgnd 29 (4) 30 (3) 10 (23) (30) 3 ifgnd (22) 11 (21) 12 saw driver ifout iffil2 (5) 28 iffil1 (6) 27 agc (8) 25
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 4 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 6. pinning information 6.1 pinning 6.2 pin description fig 2. pin con?guration for TDA6500tt fig 3. pin con?guration for tda6501tt TDA6500tt 001aac943 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 loscin loscout oscgnd moscout moscin hoscin1 hoscout2 hoscout1 hoscin2 v cc ifgnd ifout pllgnd xtal vt cp mhbin2 mhbin1 lbin rfgnd iffil2 iffil1 p2 agc p1 p0 p3 as scl sda p6/adc p4 tda6501tt 001aac944 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 17 20 19 22 21 24 23 26 25 32 31 30 29 28 27 loscin loscout oscgnd moscout moscin hoscin1 hoscout2 hoscout1 hoscin2 v cc ifgnd ifout pllgnd xtal vt cp mhbin2 mhbin1 lbin rfgnd iffil2 iffil1 p2 agc p1 p0 p3 as scl sda p6/adc p4 table 2: pin description symbol pin description TDA6500tt tda6501tt agc 25 8 agc output as 21 12 address selection input cp 16 17 charge pump output hoscin1 6 27 high band oscillator input 1 hoscin2 9 24 high band oscillator input 2 hoscout1 8 25 high band oscillator output 1 hoscout2 7 26 high band oscillator output 2 iffil1 27 6 if ?lter output 1 iffil2 28 5 if ?lter output 2 ifgnd 11 22 if ground ifout 12 21 if output lbin 30 3 low band rf input loscin 1 32 low band oscillator input loscout 2 31 low band oscillator output mhbin1 31 2 mid and high band rf input 1 mhbin2 32 1 mid and high band rf input 2 moscin 5 28 mid band oscillator input
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 5 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 7. functional description 7.1 general TDA6500tt and tda6501tt are programmable 2-mixer, 3-oscillator and synthesizer moplls intended for pure 3-band tuner concepts. the device includes two double balanced mixers for the low and mid/high bands and three oscillators for the low, mid and high bands respectively. the band limits for pal tuners are shown in t ab le 3 . other functions are an if ampli?er, a wide-band agc detector and a pll synthesizer. two pins are available between the mixer output and the if ampli?er input to enable if ?ltering for improved signal handling. bit p0 enables port p0 and the low band mixer and oscillator (see t ab le 4 ). bit p1 enables port p1, the mid/high band mixer and the mid band oscillator. bit p2 enables port p2 and bit p3 enables port p3. when ports p0 and p1 are disabled, the mid/high band mixer and the high band oscillator are enabled. moscout 4 29 mid band oscillator output oscgnd 3 30 oscillator ground p0 23 10 pmos open-drain port 0 to select low band operation p1 24 9 pmos open-drain port 1 to select mid band operation p2 26 7 pmos open-drain general purpose port 2 p3 22 11 pmos open-drain general purpose port 3 p4 17 16 npn open-collector general purpose port 4 p6/adc 18 15 npn open-collector general purpose port 6 or adc input pllgnd 13 20 digital ground rfgnd 29 4 rf ground scl 20 13 serial clock input sda 19 14 serial data input and output v cc 10 23 supply voltage vt 15 18 tuning voltage output xtal 14 19 crystal oscillator input table 2: pin description continued symbol pin description TDA6500tt tda6501tt table 3: low, mid and high band limits band input f rfpix (mhz) oscillator f osc (mhz) min max min max low 45.25 154.25 84.15 193.15 mid 161.25 439.25 200.15 478.15 high 455.25 855.25 494.15 894.15
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 6 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards the agc detector provides information about the if ampli?er level. five agc take-over points are available by software. two programmable agc time constants are available for search tuning and normal tuner operation. the synthesizer consists of a 15-bit programmable divider, a crystal oscillator and its programmable reference divider and a phase/frequency detector combined with a charge pump, which drives the tuning ampli?er including 33 v output. depending on the reference divider ratio (64, 80 or 128) the phase comparator operates at 62.50 khz, 50.00 khz or 31.25 khz with a 4 mhz crystal. the device can be controlled according to the i 2 c-bus format. the lock detector bit fl is set to logic 1 when the loop is locked. the agc bit is set to logic 1 when the internal agc is active (level below 3 v). these two ?ags are read on the sda line (status byte) during a read operation (see t ab le 11 ). the adc input is available on pin p6/adc for digital afc control. the adc code is read during a read operation (see t ab le 11 ). in test mode, pin p6/adc is used as a test output for 1 2 f ref and 1 2 f div (see t ab le 8 ). a minimum of seven bytes, including address byte, is required to address the device, select the vco frequency, program the ports, set the charge pump current, set the reference divider ratio, select the agc take-over point and select the agc time constant. the device has four independent i 2 c-bus addresses which can be selected by applying a speci?c voltage on input as (see t ab le 7 ). 7.2 device control the device is controlled via the i 2 c-bus. for programming, a module address of 7 bits and the r/ w bit for selecting the read or the write mode is required. 7.2.1 write mode data bytes can be sent to the device after the address transmission (?rst byte). seven data bytes are needed to fully program the device. the bus transceiver has an auto-increment facility, which permits the programming of the device within one single transmission (address + 6 data bytes). the device can also be partially programmed providing that the ?rst data byte following the address is the ?rst divider byte db1 or the control byte cb. the data bytes are de?ned in t ab le 5 and t ab le 6 . the ?rst bit of the ?rst data byte indicates whether frequency data (?rst bit = 0) or control, port and auxiliary data (?rst bit = 1) will follow. until an i 2 c-bus stop command is sent by the controller, additional data bytes can be entered without the need to re-address the device. the frequency register is loaded with data from byte db2 after the 8th scl clock table 4: mixer and oscillator band selection bit mixer band oscillator band p0 p1 low mid high low mid high 10x x 01 xx x 00 xx x
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 7 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards pulse, the control register is loaded with data from byte cb after the 8th scl clock pulse, the band switch register is loaded with data of byte bb after the 8th scl clock pulse and the auxiliary register is loaded with data of byte ab after the 8th scl clock pulse. to program the agc take-over point setting and the agc current to a different value than the default value, an additional byte, the auxiliary byte, has to be sent. to this end, the auxiliary byte is preceded by a control byte with the test bits t2, t1 and t0 set to logic 011 (see t ab le 8 ). [1] auxiliary byte ab replaces band switch byte bb when bit t2 = 0, t1 = 1 and t0 = 1. table 5: i 2 c-bus data format for write mode name byte bit ack msb lsb address byte adb 11000ma1ma0r/ w=0 a divider byte 1 db1 0 n14 n13 n12 n11 n10 n9 n8 a divider byte 2 db2 n7 n6 n5 n4 n3 n2 n1 n0 a control byte cb 1 cp t2 t1 t0 rsa rsb os a band switch byte bb 0 p6 0 p4 p3 p2 p1 p0 a auxiliary byte [1] abatcal2al1al00000 a table 6: description of bits shown in t ab le 5 symbol description a acknowledge ma1 and ma0 programmable address bits; see t ab le 7 r/ w logic 0 for write mode n14 to n0 programmable divider bits; n = (n14 2 14 ) + (n13 2 13 ) + ... + (n1 2 1 )+n0 cp charge pump current cp = 0: the charge pump current is 60 m a cp = 1: the charge pump current is 280 m a (default) t2, t1 and t0 test bits; see t ab le 8 rsa and rsb reference divider ratio select bits; see t ab le 9 os tuning ampli?er control bit os = 0: normal operation; tuning voltage is on os = 1: tuning voltage is off; high-impedance state (default) p6 and p4 npn port control bits pn = 0: port n is off; high-impedance state (default) pn = 1: buffer n is on; v o =v ce(sat) p3 to p0 pmos port control bits pn = 0: port n is off; high-impedance state (default) pn = 1: buffer n is on; v o =v cc - v ds(sat) atc agc time constant atc = 0: i agc = 220 na; d t = 2 s with c = 160 nf (default) atc = 1: i agc =9 m a; d t = 50 ms with c = 160 nf al2, al1 and al0 agc take-over point bits; see t ab le 10
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 8 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards the module address contains programmable address bits (ma1 and ma0) which offer the possibility of having up to 4 synthesizers in one system by applying a speci?c voltage on the as input. t ab le 7 gives the relationship between the input voltage applied to the as input and bits ma1 and ma0. [1] the adc input cannot be used when these test modes are active; see section 7.2.2 for more information. [1] the agc detector is disabled. both the sinking and sourcing currents from the ic are disabled. the agc output goes into a high-impedance state and an external agc source can be connected in parallel. [2] the agc detector is disabled and the fast mode current source is enabled. table 7: i 2 c-bus address selection voltage applied to pin as ma1 ma0 0 v to 0.1v cc 00 0.2v cc to 0.3v cc or open 0 1 0.4v cc to 0.6v cc 10 0.9v cc to v cc 11 table 8: test modes t2 t1 t0 test modes 0 0 0 normal mode 0 0 1 normal mode; default mode at power-on reset 0 1 0 charge pump is off 0 1 1 control byte is followed by auxiliary byte ab instead of the band switch byte bb 1 1 0 charge pump is sinking current 1 1 1 charge pump is sourcing current 100 1 2 f ref is available on pin p6/adc [1] 101 1 2 f div is available on pin p6/adc [1] table 9: reference divider ratio select rsa rsb reference divider ratio 0080 01128 1164 1 0 forbidden table 10: agc take-over point al2 al1 al0 asymmetrical mode 0 0 0 115 db m v 0 0 1 115 db m v 0 1 0 112 db m v; default mode at power-on reset 0 1 1 109 db m v 1 0 0 106 db m v 1 0 1 103 db m v 110i agc = 0 ma; external agc [1] 1 1 1 3.5 v; disabled [1]
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 9 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 7.2.2 read mode data can be read from the device by setting the r/ w bit to logic 1. the data read format is shown in t ab le 11 . after the slave address has been recognized, the device generates an acknowledge pulse and the ?rst data byte (status byte) is transferred on the sda line with the msb ?rst. data is valid on the sda line during a high-level of the scl clock signal. a second data byte can be read from the device if the microcontroller generates an acknowledge on the sda line (master acknowledge). end of transmission will occur if no master acknowledge occurs. the device will then release the data line to allow the microcontroller to generate a stop condition. the por ?ag is set to logic 1 at power-on. the ?ag is reset when an end-of-data is detected by the device (end of a read sequence). control of the loop is made possible with the in-lock ?ag (fl) which indicates when the loop is locked (fl = 1). the internal agc status is available from the agc bit. agc = 1 indicates when the selected take-over point is reached. a built-in adc is available on the p6/adc pin. the adc can be used to apply afc information to the microcontroller from the if section of the tuner. the relationship between the voltage applied to the adc input and the a2, a1 and a0 bits is given in t ab le 13 . [1] msb is transmitted ?rst. table 11: read data format name byte bit ack msb [1] lsb address byte adb 1 1000ma1ma0r/ w=1 a status byte sb por fl 1 1 agc a2 a1 a0 - table 12: description of bits shown in t ab le 11 symbol description a acknowledge ma1 and ma0 programmable address bits; see t ab le 7 r/ w logic 1 for read mode por power-on reset ?ag por = 0, normal operation por = 1, power-on state fl in-lock ?ag fl = 0, not locked fl = 1, the pll is locked agc internal agc ?ag agc = 0, internal agc not active agc = 1, internal agc is active; level below 3 v a2, a1 and a0 digital output of the 5-level adc; see t ab le 13
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 10 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [1] accuracy is 0.03v cc . 7.2.3 power-on reset the power-on detection threshold voltage is set to v por = 3.5 v at room temperature. below this threshold, the device is reset to the power-on state. in the power-on state, the charge pump current is set to 280 m a, the tuning voltage output is disabled, the test bits t2 = 0, t1 = 0 and t0 = 1, the agc take-over point is set to 112 db m v and the agc current is set to the slow mode. the high band is selected by default. table 13: adc levels voltage applied to adc input [1] a2 a1 a0 0.60v cc to v cc 100 0.45v cc to 0.60v cc 011 0.30v cc to 0.45v cc 010 0.15v cc to 0.30v cc 001 0 v to 0.15v cc 000 table 14: default bits at power-on reset name byte bit msb lsb address byte adb 11000ma1ma0x divider byte 1 db1 0 xxxxxxx divider byte 2 db2 xxxxxxxx control byte cb 11001xx1 band switch byte bb - 0 - 00000 auxiliary byte ab 0010 ----
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 11 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 8. internal circuitry table 15: internal circuits symbol pin average dc voltage versus band selection equivalent circuit [1] TDA6500tt tda6501tt low mid high loscin 1 32 1.7 1.4 1.4 loscout 2 31 2.9 3.5 3.5 oscgnd 3 30 - - - - moscout 4 29 3.5 3.02 3.5 moscin 5 28 1.4 1.7 1.4 hoscin1 6 27 2.2 2.2 1.8 hoscout2 7 26 5 5 2.5 hoscout1 8 25 5 5 2.5 hoscin2 9 24 2.2 2.2 1.8 v cc 10 23 5.0 5.0 5.0 - ifgnd 11 22 - - - ifout 12 21 2.1 2.1 2.1 fce222 (32) 1 2 (31) fce223 (28) 5 4 (29) mce141 (27) 6 7 (26) 9 (24) (25) 8 fce225 11 (22) fce226 12 (21)
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 12 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards pllgnd 13 20 - - - xtal 14 19 0.7 0.7 0.7 vt 15 18 v vt v vt v vt cp 16 17 1.0 1.0 1.0 p4 17 16 v ce(sat) or high z v ce(sat) or high z v ce(sat) or high z p6/adc 18 15 v ce(sat) or high z v ce(sat) or high z v ce(sat) or high z table 15: internal circuits continued symbol pin average dc voltage versus band selection equivalent circuit [1] TDA6500tt tda6501tt low mid high fce227 13 (20) mce142 14 (19) mce143 15 (18) mce144 16 (17) mce145 17 (16) mce146 (15) 18
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 13 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards sda 19 14 n.a. n.a. n.a. scl 20 13 n.a. n.a. n.a. as 21 12 1.25 1.25 1.25 p3 22 11 high z or v cc - v ds high z or v cc - v ds high z or v cc - v ds p0 23 10 v cc - v ds high z high z p1 24 9 high z v cc - v ds high z agc 25 8 0 v or 3.5 v 0 v or 3.5 v 0 v or 3.5 v table 15: internal circuits continued symbol pin average dc voltage versus band selection equivalent circuit [1] TDA6500tt tda6501tt low mid high mce147 (14) 19 fce234 (13) 20 fce235 (12) 21 fce236 22 (11) fce237 23 (10) fce238 24 (9) fce239 25 (8)
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 14 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [1] the pin numbers in parenthesis represent the tda6501tt. p2 26 7 high z or v cc - v ds high z or v cc - v ds high z or v cc - v ds iffil1 27 6 4.4 4.4 4.4 iffil2 28 5 4.4 4.4 4.4 rfgnd 29 4 - - - lbin 30 3 1.8 n.a. n.a. mhbin1 31 2 n.a. 1.0 1.0 mhbin2 32 1 n.a. 1.0 1.0 table 15: internal circuits continued symbol pin average dc voltage versus band selection equivalent circuit [1] TDA6500tt tda6501tt low mid high fce240 26 (7) fce241 28 (5) 27 (6) fce242 29 (4) fce243 (3) 30 mce148 (2) 31 32 (1)
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 15 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 9. limiting values [1] maximum ratings cannot be exceeded, not even momentarily without causing irreversible ic damage. maximum ratings cannot be accumulated. 10. thermal characteristics [1] the thermal resistance is highly dependant on the printed-circuit board on which the package is mounted. the thermal resistance values are given only for customers guidance. table 16: limiting values in accordance with the absolute maximum rating system (iec 60134). [1] symbol parameter conditions min max unit v cc supply voltage - 0.3 +6 v v xtal crystal input voltage - 0.3 v cc + 0.3 v v p6/adc npn port input and output voltage - 0.3 v cc + 0.3 v i p6/adc npn port output current (open-collector) 0 10 ma v vt tuning voltage output - 0.3 +35 v v cp charge pump output voltage - 0.3 v cc + 0.3 v v p4 npn port output voltage (open-collector) - 0.3 v cc + 0.3 v i p4 npn port output current (open-collector) 0 10 ma v sda serial data input/output voltage - 0.3 +6 v i sda serial data output current - 1 +10 ma v scl serial clock input voltage - 0.3 +6 v v as address selection input voltage - 0.3 v cc + 0.3 v v pn pmos port output voltage (open-drain) - 0.3 v cc + 0.3 v i p1 pmos port output current (open-drain) - 25 0 ma i p0 pmos port output current (open-drain) - 15 0 ma i p2 , i p3 pmos port output current (open-drain) - 10 0 ma t stg storage temperature - 40 +150 c t amb ambient temperature - 20 +85 c t j junction temperature - 150 c table 17: thermal characteristics symbol parameter conditions typ unit sot487ec3 package (TDA6500tt) r th(j-a) thermal resistance from junction to ambient in free air; one layer printed-circuit board, jedec standards [1] 110 k/w sot487ec5 package (tda6501tt) r th(j-a) thermal resistance from junction to ambient in free air; one layer printed-circuit board, jedec standards [1] 115 k/w
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 16 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 11. characteristics table 18: supplies v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit supply v cc supply voltage 4.5 5.0 5.5 v i cc supply current all pnp ports off - 74 94 ma one pnp port on; sourcing 20 ma - 96 116 ma two pnp ports on; one port sourcing 20 ma; one other port sourcing 5 ma 102 122 ma table 19: pll v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit functional range v por power-on reset supply voltage for a voltage lower than v por , power-on reset is active 1.5 3.5 - v n divider ratio 15-bit frequency word 64 - 32767 f xtal crystal oscillator frequency r xtal =25 w to 300 w 3.2 4.0 4.48 mhz ? z xtal ? input impedance (absolute value) f xtal = 4 mhz 600 1200 - w pmos ports: p0, p1, p2 and p3 i lo output leakage current v cc = 5.5 v; v pn =0v --10 m a v ds(p0)(sat) output saturation voltage buffer p0 is on only; sourcing 10 ma - 0.25 0.4 v v ds(p1)(sat) output saturation voltage buffer p1 is on only; sourcing 20 ma - 0.25 0.4 v v ds(p2)(sat) , v ds(p3)(sat) output saturation voltage buffer p2 or p3 is on; sourcing 5 ma - 0.25 0.4 v npn ports: p4 and p6 i lo output leakage current v cc = 5.5 v; v pn =6v --10 m a v ce(sat) output saturation voltage buffer p4 or p6 is on; sinking 5 ma - 0.25 0.4 v adc input v i adc input voltage see t ab le 13 0- v cc v i ih high-level input current adc input v i =v cc --10 m a i il low-level input current adc input v i =0v - 10 - - m a as input (address selection) i ih high-level input current as input v i =v cc --10 m a i il low-level input current as input v i =0v - 10 - - m a scl and sda inputs v il low-level input voltage 0 - 1.5 v v ih high-level input voltage 2.3 - 5.5 v i ih high-level input current v bus = 5.5 v; v cc =0v - - 10 m a v bus = 5.5 v; v cc = 5.5 v - - 10 m a
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 17 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards i il low-level input current v bus = 1.5 v; v cc =0v - - 10 m a v bus =0v; v cc = 5.5 v - 10 - - m a sda output i lo leakage current sda output v o = 5.5 v - - 10 m a v o output voltage i o(sink) = 3 ma - - 0.4 v clock frequency f clk clock frequency - - 400 khz charge pump output cp ? i ih ? high-level input current (absolute value) cp = 1 - 280 - m a ? i il ? low-level input current (absolute value) cp=0 - 60 - m a i lo(off) off-state leakage current t2 = 0; t1 = 1; t0 = 0 - 15 0 +15 na tuning voltage output vt i lo(off) off-state leakage current os = 1; v vt =33v - - 10 m a v o output voltage when the loop is closed os = 0; t2 = 0; t1 = 0; t0 = 1; r l =27k w ; v vt =33v 0.2 - 32.7 v table 19: pll continued v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit table 20: mixer v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit low band mixer mode (p0 = 1 and p1 = 0); including if ampli?er f rf rf frequency picture carrier [1] 44.25 - 154.25 mhz g v voltage gain f rf = 44.25 mhz; see figure 8 25.0 27.5 30 db f rf = 157 mhz; see figure 8 25.0 27.5 30 db nf noise ?gure f rf = 50 mhz; see figure 9 and 10 - 8.0 10.0 db v o(mod) output voltage causing 0.3 % cross modulation in channel f rf = 44.25 mhz; see figure 12 108 111 - db m v f rf = 157 mhz; see figure 12 108 111 - db m v v o(fm) output voltage causing 1.1 khz incidental fm f rf = 44.25 mhz [2] 108 111 - db m v f rf = 157 mhz [2] 108 111 - db m v int so2 channel so2 beat v rfpix = 115 db m v at if output [3] 57 60 - dbc v i input level without lock-out see figure 11 [4] - - 120 db m v g os optimum source conductance for noise ?gure f rf = 50 mhz - 0.7 - ms f rf = 150 mhz - 0.9 - ms g i input conductance f rf = 44.25 mhz; see figure 4 - 0.30 - ms f rf = 161.25 mhz; see figure 4 - 0.33 - ms c i input capacitance f rf = 44.25 to 161.25 mhz; see figure 4 - 1.29 - pf high band mixer in mid band mode (p0 = 0 and p1 = 1); including if ampli?er f rf rf frequency picture carrier [1] 161.25 - 439.25 mhz
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 18 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [1] the rf frequency range is de?ned by the oscillator frequency range and the intermediate frequency (if). [2] this is the level of the rf unwanted signal, 50 % amplitude modulated with 1 khz, that causes a 1.1 khz fm modulation of the l ocal oscillator and thus of the wanted signal; v wanted = 100 db m v; f unwanted =f wanted + 5.5 mhz. the fm modulation is measured at the oscillator output with a peeking coil using a modulation analyzer with a peak-to-peak detector and a post detection ?lter of 300 hz up to 3 khz. [3] channel so2 beat is the interfering product of f rfpix , f if and f osc of channel so2; f beat = 37.35 mhz. the possible mechanisms are: f osc - 2 f if or 2 f rfpix - f osc . for the measurement v o(ifout) =v rfpix = 115 db m v. g v voltage gain f rf = 157 mhz; see figure 13 35 38 41 db f rf = 443 mhz; see figure 13 35 38 41 db nf noise ?gure (not corrected for image) f rf = 157 mhz; see figure 14 - 6 8.0 db f rf = 443 mhz; see figure 14 - 6 8.0 db v o(mod) output voltage causing 0.3 % cross modulation in channel f rf = 157 mhz; see figure 15 108 111 - db m v f rf = 443 mhz; see figure 15 108 111 - db m v v o(fm) output voltage causing 1.1 khz incidental fm f rf = 157 mhz [2] 108 111 - db m v f rf = 443 mhz [2] 108 111 db m v v f(n+5) - 1 (n + 5) - 1 mhz pulling f rfwanted = 443 mhz; f osc = 481.9 mhz; f rfunwanted = 482 mhz [5] 72 80 - db m v z i input impedance (r s +jl s w )r s at f rf = 157 mhz; see figure 5 -25- w r s at f rf = 443 mhz; see figure 5 -25- w l s at f rf = 157 mhz; see figure 5 -13-nh l s at f rf = 443 mhz; see figure 5 -13-nh v i input level without lock-out see figure 16 [4] - - 120 db m v high band mixer in high band mode (p0 = 0 and p1 = 0); including if ampli?er f rf rf frequency picture carrier [1] 455.25 - 855.25 mhz g v voltage gain f rf = 443 mhz; see figure 13 35 38 41 db f rf = 863.25 mhz; see figure 13 35 38 41 db nf noise ?gure (not corrected for image) f rf = 443 mhz; see figure 14 - 6.0 8.0 db f rf = 863.25 mhz; see figure 14 - 7.0 9.0 db v o(mod) output voltage causing 0.3 % cross modulation in channel f rf = 443 mhz; see figure 15 108 111 - db m v f rf = 863.25 mhz; see figure 15 108 111 - db m v v o(fm) output voltage causing 1.1 khz incidental fm f rf = 443 mhz [2] 108 111 - db m v f rf = 863.25 mhz [2] 108 111 - db m v v f(n+5) - 1 (n + 5) - 1 mhz pulling f rfwanted = 863.25 mhz; f osc = 902.15 mhz; f rfunwanted = 902.25 mhz [5] 72 80 - db m v z i input impedance (r s +jl s w )r s at f rf = 443 mhz; see figure 5 -25- w r s at f rf = 863.25 mhz; see figure 5 -23- w l s at f rf = 443 mhz; see figure 5 -13-nh l s at f rf = 863.25 mhz; see figure 5 -13-nh v i input level without lock-out see figure 16 [4] - - 120 db m v table 20: mixer continued v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 19 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [4] the if output signal stays stable within the range of the f ref step for a low level rf input up to 120 db m v. this should be veri?ed for every channel in the band. [5] (n + 5) - 1 mhz pulling is the input level of channel n + 5, at frequency 1 mhz lower, causing fm sidebands 30 db below the wanted carrier. fig 4. input admittance (s 11 ) of the low band mixer (40 mhz to 140 mhz); y o =20ms fig 5. input impedance (s 11 ) of the mid and high band mixer (160 mhz to 870 mhz); z o = 100 w mce150 0.2 0.5 1 2 5 0.2 0.5 1 2 5 10 10 0 5 0.5 0.2 2 1 10 + j - j 40 mhz 140 mhz mce151 0.2 0.5 1 2 5 0.2 0.5 1 2 5 10 10 0 5 0.5 0.2 2 1 10 + j - j 870 mhz 160 mhz
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 20 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards table 21: oscillator v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit low band oscillator f osc oscillator frequency [1] 84.15 - 193.15 mhz d f osc(v) oscillator frequency shift with supply voltage d v cc =5 % [2] - 2070khz d v cc = 10 % [2] - 110 - khz d f osc(t) oscillator frequency drift with temperature d t=25 c; v cc = 5 v with compensation [3] - 800 1100 khz d f osc(t) oscillator frequency switch-on drift 5 s to 15 min after switching on v cc =5v [4] - 500 700 khz f osc phase noise, carrier-to-noise sideband 10 khz frequency offset; worst case in the frequency range 84 87 - dbc/hz 100 khz frequency offset; worst case in the frequency range 104 107 - dbc/hz rsc p-p ripple susceptibility of v cc (peak-to-peak value) 4.75 v < v cc < 5.25 v; worst case in the frequency range; ripple frequency 500 khz [5] 15 20 - mv mid band oscillator f osc oscillator frequency [1] 200.15 - 478.15 mhz d f osc(v) oscillator frequency shift with supply voltage d v cc =5 % [2] - 2070khz d v cc = 10 % [2] - 110 - khz d f osc(t) oscillator frequency drift with temperature d t=25 c; v cc = 5 v with compensation [3] - 1000 1500 khz d f osc(t) oscillator frequency drift after switch-on 5 s to 15 min after switching on v cc =5v [4] - 500 700 khz f osc phase noise, carrier-to-noise sideband 10 khz frequency offset; worst case in the frequency range 84 87 - dbc/hz 100 khz frequency offset; worst case in the frequency range 104 107 - dbc/hz rsc p-p ripple susceptibility of v cc (peak-to-peak value) 4.75 v < v cc < 5.25 v; worst case in the frequency range; ripple frequency 500 khz [5] 15 20 - mv high band oscillator f osc oscillator frequency [1] 494.15 - 894.15 mhz d f osc(v) oscillator frequency shift with supply voltage d v cc =5 % [2] - 2070khz d v cc = 10 % [2] - 300 - khz d f osc(t) oscillator frequency drift with temperature d t=25 c; v cc = 5 v with compensation [3] - 1100 1500 khz d f osc(t) oscillator frequency drift after switch-on 5 s to 15 min after switching on v cc =5v [4] - 600 900 khz
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 21 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [1] limits are related to the tank circuits used in figure 7 for a pal application. the choice of different external components adapts the measurement circuit to other frequency bands or ntsc applications. [2] the frequency shift is de?ned as a change in oscillator frequency when the supply voltage varies from v cc = 5 v to 4.75 v (4.5 v) or from v cc = 5 v to 5.25 v (5.5 v). the oscillator is free running during this measurement. [3] the frequency drift is de?ned as a change in oscillator frequency when the ambient temperature varies from t amb =25 cto50 c or from t amb =25 c to 0 c. the oscillator is free running during this measurement. [4] switch-on drift is de?ned as the change in oscillator frequency between 5 s and 15 min after switch on. the oscillator is free running during this measurement. [5] the supply ripple susceptibility is measured in the circuit according to figure 7 using a spectrum analyzer connected to the if output. an unmodulated rf signal is applied to the test board rf input. a sinewave signal with a frequency of 500 khz is superimposed onto the supply voltage. the amplitude of this ripple signal is adjusted to bring the 500 khz sidebands around the if carrier to a level of - 53.5 db with respect to the carrier. [1] this is the level of divider interferences close to the if. for example channel s3: f osc = 158.15 mhz, 1 4 f osc = 39.5375 mhz. the loscin input must be left open (i.e. not connected to any load or cable); the hoscin1 and hoscin2 inputs are connected to a hybrid. [2] crystal oscillator interference means the 4 mhz sidebands caused by the crystal oscillator. the rejection has to be greater t han 60 db for an if output signal of 100 db m v. [3] the reference frequency rejection is the level of reference frequency sidebands (e.g. 62.5 khz) related to the carrier. the r ejection has to be greater than 60 db for an if output signal of 100 db m v. f osc phase noise, carrier-to-noise sideband 10 khz frequency offset; worst case in the frequency range 84 87 - dbc/hz 100 khz frequency offset; worst case in the frequency range 104 107 - dbc/hz rsc p-p ripple susceptibility of v cc (peak-to-peak value) 4.75 v < v cc < 5.25 v; worst case in the frequency range; ripple frequency 500 khz [5] 15 20 - mv table 21: oscillator continued v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit table 22: if ampli?er v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit if ampli?er s 22 output re?ection coef?cient magnitude; see figure 6 -38-db phase; see figure 6 - 0.36 - deg z o output impedance (r s +jl s w )r s at 36.15 mhz - 79 - w c s at 36.15 mhz - 9 - nf r s at 43.5 mhz - 80 - w c s at 43.5 mhz - 3 - nf rejection at the if output int div level of divider interferences in the if signal worst case [1] --23db m v int xtal crystal oscillator interferences rejection v if = 100 db m v; worst case in the frequency range [2] 60 66 - dbc intf ref reference frequency rejection v if = 100 db m v; worst case in the frequency range [3] 60 66 - dbc
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 22 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards fig 6. output impedance (s 22 ) of the if ampli?er (30 mhz to 50 mhz); z o =50 w mce152 0.2 0.5 1 2 5 0.2 0.5 1 2 5 10 10 0 5 0.5 0.2 2 1 10 + j - j 50 mhz 30 mhz table 23: agc output v cc =5v; t amb =25 c; values are given for an if ampli?er with 500 w load (measured as shown in figure 7 for the pal standard); unless otherwise speci?ed. symbol parameter conditions min typ max unit agc top agc take-over point al2 = 0; al1 = 1; al0 = 0 110.5 112 113.5 db m v i source(fast) source current 1 8.0 9.5 11.0 m a i source(slow) source current 2 210.0 245.0 280.0 na i sink(peak) peak sink current to ground 80 100 120 m a v max agc maximum output voltage 3.45 3.5 4.0 v v min agc minimum output voltage 0 - 0.1 v v rf(slip) rf voltage range to switch the agc from active to not active mode - - 0.5 db v rm(l) agc output voltage agc bit = 1 or agc active 0 - 2.9 v v rm(h) agc output voltage agc bit = 0 or agc not active 3 3.5 4.0 v i lo agc leakage current al2 = 1; al1 = 1; al0 = 0; 0v 9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 23 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 12. application information 12.1 tuning ampli?er the tuning ampli?er is capable of driving the varicap voltage without an external transistor. the tuning voltage output must be connected to an external load of 27 k w which is connected to the tuning voltage supply rail. the loop ?lter design depends on the oscillator characteristics and the selected reference frequency. 12.2 crystal oscillator the crystal oscillator uses a 4 mhz crystal connected in series with an 18 pf capacitor thereby operating in the series resonance mode. connecting the crystal to the ground is preferred, but it can also be connected to the supply voltage. 12.3 examples of i 2 c-bus control conditions: f osc = 100 mhz p0 = on (to switch on low band) p3=on i cp = 280 m a f step = 62.5 khz n=1600 f xtal = 4 mhz i agc = 245 na agc take-over point = set to 112 db m v asymmetrical 12.3.1 write sequence t ab le 24 to 29 show various write sequences where: s=start a = acknowledge p=stop for the complete sequence see t ab le 24 (sequence 1) or t ab le 25 (sequence 2). other i 2 c-bus addresses may be selected by applying an appropriate voltage to pin as. table 24: complete sequence 1 start address byte divider byte 1 divider byte 2 control byte band switch byte control byte auxiliary byte stop s c2 a 06 a 40 a ce a 09 a de a 20 a p table 25: complete sequence 2 start address byte control byte auxiliary byte control byte band switch byte divider byte 1 divider byte 2 stop s c2 a de a 20 a ce a 09 a 06 a 40 a p
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 24 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 12.3.2 read sequence t ab le 30 and 31 show read sequences where: s=start a = acknowledge xx = read status byte x = no acknowledge from the master means end of sequence p=stop 13. test information 13.1 measurement circuit the measurement circuit for pal on a test jig is given in figure 7 and the components are given in t ab le 32 . table 26: divider bytes only sequence start address byte divider byte 1 divider byte 2 stop sc2a06a40ap table 27: control and band switch bytes only sequence start address byte control byte band switch byte stop sc2acea09ap table 28: control and auxiliary bytes only sequence start address byte control byte auxiliary byte stop sc2adea20ap table 29: control byte only sequence start address byte control byte stop sc2 a de a p table 30: status byte acquisition start address byte status byte stop sc3 a xx x p table 31: two status bytes acquisition start address byte status byte 1 status byte 2 stop sc3axxaxxxp
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 25 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards the pin numbers in parenthesis represent the tda6501tt. fig 7. measurement circuit for pal on test jig c3 l1 82 pf 6t; ? 4 mm 3t; ? 2 mm 1.8 pf d1 bb182 r1 12 w r5 22 k w c1 loscin 1 (32) 2 (31) 1.5 pf c2 loscout 3 (30) oscgnd c6 l2 100 pf l3 3t; ? 2 mm 1 pf d2 bb178 r2 5.6 w d3 bb179 r4 5.6 k w r6 22 k w r7 5.6 k w r3 27 w r19 r10 27 k w 18 k w r21 4 v cc v cc 5 v 33 v gnd jp2 321 3.9 k w r20 4.7 k w r15 1/2f ref or 1/2f div for test purpose only 2.2 k w r18 sda p6/adc p4 scl as p3 p0 p1 agc p2 iffil1 iffil2 rfgnd lbin lbin mhbin1 mhbin1 mhbin2 mhbin2 330 w r17 330 w r16 0 w r13 d6 led 470 w r22 for test purpose only 6.8 k w c4 moscout 4 (29) 5 (28) 1.5 pf c5 1.2 pf c7 27 pf c11 1.2 pf c8 moscin 6 (27) 7 (26) hoscin1 hoscout2 1.2 pf c9 1.2 pf c10 8 (25) 9 (24) hoscout1 4.7 nf c12 l5 680 nh 10 (23) 4.7 nf c13 18 pf 4 mhz x1 tp 2 c14 820 pf c16 100 nf c15 c23 10 nf c25 10 m f q1 bc847 jp3 jumper c26 10 m f c28 3.9 pf c27 22 pf for test purpose only ifout measurement 12 (21) v cc hoscin2 11 (22) ifgnd ifout 13 (20) 14 (19) 15 (18) 16 (17) (1) 32 (2) 31 (3) 30 (4) 29 (5) 28 (6) 27 (7) 26 (8) 25 (9) 24 (10) 23 (12) 21 (11) 22 (13) 20 (14) 19 (15) 18 (16) 17 pllgnd xtal vt cp tp 1 654 2 3 jp1 1 n.c. 5 v sda as scl fce828 gnd r14 d7 led 1 k w r12 c22 TDA6500tt (tda6501tt) 160 nf c21 l4 2 x 6t 12 pf c20 12 pf c19 4.7 nf c18 4.7 nf c17 4.7 nf d5 led 220 w r11 d4 led 1 k w
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 26 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards table 32: components for measurement circuit component value component value capacitors; all smd and np0, unless otherwise stated c1 1.8 pf (n750) c15 100 nf c2 1.5 pf (n750) c16 820 pf c3 82 pf (n750) c17 4.7 nf c4 1 pf (n750) c18 4.7 nf c5 1.5 pf (n750) c19 4.7 nf c6 100 pf (n750) c20 12 pf c7 1.2 pf (n750) c21 12 pf c8 1.2 pf (n750) c22 160 nf c9 1.2 pf (n750) c23 10 nf c10 1.2 pf (n750) c25 10 m f (16 v; electrolytic) c11 27 pf (n750) c26 10 m f (16 v; electrolytic) c12 4.7 nf c27 22 pf c13 4.7 nf c28 3.9 pf c14 18 pf resistors; all smd r1 12 w r12 220 w r2 5.6 w r13 470 w r3 27 w r14 1 k w r4 5.6 k w r15 2.2 k w r5 22 k w r16 0 w r6 22 k w r17 330 w r7 5.6 k w r18 330 w r10 27 k w r19 18 k w r11 1 k w r20 4.7 k w diodes and leds d1 bb182 d4 3 mm d2 bb178 d5 3 mm d3 bb179 d6 3 mm d7 3 mm coils; including if coil; wire size 0.4 mm l1 6 t; ? 4 mm l4 2 x 6 t; coil type: toko 7kn; material: 113 kn; screw core: 03-0093; pot core: 04-0026 l2 3 t; ? 2mm l3 3 t; ? 2mm l5 680 nh ic, transistor and crystal ic TDA6500tt; tda6501tt x1 4 mhz q1 bc847
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 27 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 13.2 test circuit for low band measurements z i >> 50 w? v i =2 v meas =80db m v v i =v meas +6db=80db m v v o =v meas =v meas + attenuation g v = 20 log pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf and attenuation = 10.2 db fig 8. gain (g v ) measurement in low band a. f rf =50mhz b. f rf = 150 mhz low band mixer frequency response measured = 57 mhz; loss = 0 db; image suppression = 16 db. c1 = 9 pf. c2 = 15 pf. l1 = 7 turns ( ? 5.5 mm, wire ? = 0.5 mm). l1 = semi rigid cable (rim): 5 cm long; 33 db/100 m; 50 w ; 96 pf/m low band mixer frequency response measured = 150.3 mhz; loss = 1.3 db; image suppression = 13 db. c3 = 5 pf. c4 = 25 pf. l2 = semi rigid cable (rim): 30 cm long; 33 db/100 m; 50 w 96 pf/m. l3 = semi rigid cable (rim): 5 cm long; 33 db/100 m; 50 w 96 pf/m. fig 9. input circuit for optimum noise ?gure in the low band fce213 v i 50 w 50 w 50 w v lbin ifout v meas rms voltmeter spectrum analyzer v o dut v' meas signal source c l e 50 50 2 l 2 w 2 + ------------------------------- - v o v i ------ 001aad065 l1 c2 c1 pcb plug bnc rim-rim i1 mbe286 plug bnc c4 c3 pcb rim-rim i3 i2
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 28 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards nf = nf meas - loss of input circuit pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf fig 10. noise ?gure (nf) measurement in low band z i >> 50 w? v i =2 v meas =v meas +6db pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf fig 11. maximum rf input level without lock-out in low band fce214 lbin ifout dut bnc rim input circuit c l noise source noise figure meter fce219 v i 50 w 50 w 50 w v lbin ifout v meas rms voltmeter spectrum analyzer dut signal source c l e v o =v meas =v meas + attenuation wanted output signal at f rfpix ; v o = 100 db m v. unwanted output signal at f rfpix + 5.5 mhz. the level of unwanted signal is measured by causing 0.09 % am modulation in the wanted signal. pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf and attenuation = 10.2 db fig 12. cross modulation measurement in low band fce827 50 w 50 w lbin ifout rms voltmeter v o dut a b c d hybrid c l e u modulation analyzer unwanted signal source e w wanted signal source am = 30% 2 khz v v meas 18 db attenuator filter 38.9 mhz (pal & ofdm) 50 w 50 w 50 50 2 l 2 w 2 + ------------------------------- -
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 29 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 13.3 test circuit for mid and high band measurements loss in hybrid = 1 db. v i =v meas - loss = 70 db m v v o =v meas =v meas + attenuation g v = 20 log pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf and attenuation = 10.2 db fig 13. gain (g v ) measurement in mid and high bands loss in hybrid = 1 db. nf = nf meas - loss. pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf fig 14. noise ?gure (nf) measurement in mid and high bands fce216 v i 50 w 50 w 50 w 50 w v mhbin1 mhbin2 ifout v meas rms voltmeter spectrum analyzer v o dut v' meas signal source a b c d hybrid c l e 50 50 2 l 2 w 2 + ------------------------------- - v o v i ------ fce217 50 w mhbin1 mhbin2 ifout dut a b c d hybrid c l noise source noise figure meter
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 30 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards v o =v meas =v meas + attenuation wanted output signal at f rfpix ; v o = 100 db m v. unwanted output signal at f rfpix + 5.5 mhz. the level of unwanted signal is measured by causing 0.09 % am modulation in the wanted signal. pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf and attenuation = 10.2 db fig 15. cross modulation measurement in mid and high bands fce829 50 w 50 w 50 w 50 w 50 w mhbin1 mhbin2 ifout rms voltmeter v o dut a b c d hybrid a b c d hybrid c l e u unwanted signal source e w wanted signal source am = 30% 2 khz v v meas 12 db attenuator filter 38.9 mhz (pal & ofdm) 50 50 2 l 2 w 2 + ------------------------------- - loss in hybrid = 1 db. v i =v meas - loss. pal: if = 38.9 mhz; l = 680 nh; c = 25.9 pf fig 16. maximum rf input level without lock-out in mid and high bands v i 50 w 50 w 50 w v mhbin1 mhbin2 ifout v meas rms voltmeter dut signal source a b c d hybrid e fce220 50 w spectrum analyzer c l
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 31 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 14. package outline fig 17. package outline sot487-1 (tssop32) unit a 1 a 2 a 3 b p cd (1) e (2) eh e ll p z y w v q references outline version european projection issue date iec jedec jeita mm 0.15 0.05 0.95 0.85 0.30 0.19 0.20 0.09 11.1 10.9 6.2 6.0 0.65 8.3 7.9 0.78 0.48 8 0 o o 0.1 0.1 0.2 1 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 sot487-1 mo-153 99-12-27 03-02-18 w m b p d z e 0.25 116 32 17 q a a 1 a 2 l p detail x l (a ) 3 h e e c v m a x a y 0 2.5 5 mm scale tssop32: plastic thin shrink small outline package; 32 leads; body width 6.1 mm; lead pitch 0.65 mm sot487-1 a max. 1.1 pin 1 index
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 32 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 15. soldering 15.1 introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering can still be used for certain surface mount ics, but it is not suitable for ?ne pitch smds. in these situations re?ow soldering is recommended. 15.2 re?ow soldering re?ow soldering requires solder paste (a suspension of ?ne solder particles, ?ux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. several methods exist for re?owing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. typical re?ow peak temperatures range from 215 cto270 c depending on solder paste material. the top-surface temperature of the packages should preferably be kept: ? below 225 c (snpb process) or below 245 c (pb-free process) C for all bga, htsson..t and ssop..t packages C for packages with a thickness 3 2.5 mm C for packages with a thickness < 2.5 mm and a volume 3 350 mm 3 so called thick/large packages. ? below 240 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicated on packing, must be respected at all times. 15.3 wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was speci?cally developed. if wave soldering is used the following conditions must be observed for optimal results: ? use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. ? for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 33 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. ? for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be ?xed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated ?ux will eliminate the need for removal of corrosive residues in most applications. 15.4 manual soldering fix the component by ?rst soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the ?at part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 c and 320 c. 15.5 package related soldering information [1] for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales of?ce. [2] all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . [3] these transparent plastic packages are extremely sensitive to re?ow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared re?ow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the re?ow oven. the package body peak temperature must be kept as low as possible. table 33: suitability of surface mount ic packages for wave and re?ow soldering methods package [1] soldering method wave re?ow [2] bga, htsson..t [3] , lbga, lfbga, sqfp, ssop..t [3] , tfbga, vfbga, xson not suitable suitable dhvqfn, hbcc, hbga, hlqfp, hso, hsop, hsqfp, hsson, htqfp, htssop, hvqfn, hvson, sms not suitable [4] suitable plcc [5] , so, soj suitable suitable lqfp, qfp, tqfp not recommended [5] [6] suitable ssop, tssop, vso, vssop not recommended [7] suitable cwqccn..l [8] , pmfp [9] , wqccn..l [8] not suitable not suitable
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 34 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards [4] these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. [5] if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. [6] wave soldering is suitable for lqfp, qfp and tqfp packages with a pitch (e) larger than 0.8 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. [7] wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is de?nitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. [8] image sensor packages in principle should not be soldered. they are mounted in sockets or delivered pre-mounted on ?ex foil. however, the image sensor package can be mounted by the client on a ?ex foil by using a hot bar soldering process. the appropriate soldering pro?le can be provided on request. [9] hot bar soldering or manual soldering is suitable for pmfp packages.
9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 35 of 37 philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 16. revision history table 34: revision history document id release date data sheet status change notice doc. number supersedes TDA6500_tda6501_2 20050614 product data sheet - 9397 750 15057 TDA6500_tda6501_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? t ab le 23 a gc output : maximum values of v max , v rm(h) and v o(off) changed from 3.6 v to 4.0 v. TDA6500_tda6501_1 20030605 product speci?cation - 9397 750 10109 -
philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 9397 750 15057 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 14 june 2005 36 of 37 17. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 18. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 19. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 20. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. i 2 c-bus wordmark and logo are trademarks of koninklijke philips electronics n.v. 21. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 14 june 2005 document number: 9397 750 15057 published in the netherlands philips semiconductors TDA6500; tda6501 5 v mixer/oscillator and synthesizer for pal and ntsc standards 22. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 device control . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2.1 write mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2.2 read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7.2.3 power-on reset . . . . . . . . . . . . . . . . . . . . . . . . 10 8 internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . 11 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 15 10 thermal characteristics. . . . . . . . . . . . . . . . . . 15 11 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 16 12 application information. . . . . . . . . . . . . . . . . . 23 12.1 tuning ampli?er. . . . . . . . . . . . . . . . . . . . . . . . 23 12.2 crystal oscillator . . . . . . . . . . . . . . . . . . . . . . . 23 12.3 examples of i 2 c-bus control . . . . . . . . . . . . . . 23 12.3.1 write sequence. . . . . . . . . . . . . . . . . . . . . . . . 23 12.3.2 read sequence. . . . . . . . . . . . . . . . . . . . . . . . 24 13 test information . . . . . . . . . . . . . . . . . . . . . . . . 24 13.1 measurement circuit . . . . . . . . . . . . . . . . . . . . 24 13.2 test circuit for low band measurements . . . . . 27 13.3 test circuit for mid and high band measurements . . . . . . . . . . . . . . . . . . . . . . . . 29 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 31 15 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 15.1 introduction to soldering surface mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 15.2 re?ow soldering . . . . . . . . . . . . . . . . . . . . . . . 32 15.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 32 15.4 manual soldering . . . . . . . . . . . . . . . . . . . . . . 33 15.5 package related soldering information . . . . . . 33 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 35 17 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 36 18 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 19 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 20 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 21 contact information . . . . . . . . . . . . . . . . . . . . 36

▲Up To Search▲

Price & Availability of TDA6500

	To Download TDA6500 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .